Panish, M. B.
Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heteroestructures / M. B. Panish - New York (State) : Springer-Verlag, 1993 - 428 p.
1. Introduction 2. Chemistry 3. The generation of atomic and molecular beams for elemental and gas source molecular beam epitaxy 4. Molecular beam epitaxy systems and procedures 5. Doping during GDMBE 6. Characterization of heterostructures by high resolution X-ray diffraction 7. Optical properties of quantum wells 8. Carrier transport across quantum wells and superlattices 9. Bipolar transistors 10. Optoelectronic devices 11. In-Situ processing and selective área epitaxy
354056540X
Molecular Beam Epitaxy
Gallium Arsenide Semiconuctors
621.38152 / P192
Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heteroestructures / M. B. Panish - New York (State) : Springer-Verlag, 1993 - 428 p.
1. Introduction 2. Chemistry 3. The generation of atomic and molecular beams for elemental and gas source molecular beam epitaxy 4. Molecular beam epitaxy systems and procedures 5. Doping during GDMBE 6. Characterization of heterostructures by high resolution X-ray diffraction 7. Optical properties of quantum wells 8. Carrier transport across quantum wells and superlattices 9. Bipolar transistors 10. Optoelectronic devices 11. In-Situ processing and selective área epitaxy
354056540X
Molecular Beam Epitaxy
Gallium Arsenide Semiconuctors
621.38152 / P192
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