000			00782nam a22002177a 4500
999			_c47792 _d47792
001			2419
003			OSt
005			20161104173614.0
007			ta
008			151110b xxu||||| |||| 00| 0 eng d
041			_aeng
082			_a621.381 _bO658
100	4	0	_aCoburn, J. W. _911870
245	0		_aPlasma etching and reactive ion etching / _cJ. W. Coburn
260			_aNew York : _bAmerican Institute of Physics, _c1982
300	4		_a87 p.
505			_a1. Introduction 2. Apparatus, terminology and parameters 3. The reactive gas glow discharge 4. Gas-Surface chemistry 5. Glow discharge process 6. The etching of aluminum 7. Plasma diagnostics and process control 8. Apparatus considetations.
650			_aSemiconductors _97680
650			_aEtching _911872
942			_2ddc _cLOPT