Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heteroestructures / M. B. Panish
By: Panish, M. B
Contributor(s): Temkin, HMaterial type: 
TextLanguage: English Publisher: New York (State) : Springer-Verlag, 1993Description: 428 pISBN: 354056540XSubject(s): Molecular Beam Epitaxy | Gallium Arsenide SemiconuctorsDDC classification: 621.38152
Contents:
1. Introduction 2. Chemistry 3. The generation of atomic and molecular beams for elemental and gas source molecular beam epitaxy 4. Molecular beam epitaxy systems and procedures 5. Doping during GDMBE 6. Characterization of heterostructures by high resolution X-ray diffraction 7. Optical properties of quantum wells 8. Carrier transport across quantum wells and superlattices 9. Bipolar transistors 10. Optoelectronic devices 11. In-Situ processing and selective área epitaxy
| Item type | Current location | Collection | Call number | Copy number | Status | Date due | Barcode |
|---|---|---|---|---|---|---|---|
Libro OptoElectrónica
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Laboratorio de Optoelectrónica RESERVA | Papel | 621.38152 P192 (Browse shelf) | Ej. 1 | Available | L000162 |
Browsing Laboratorio de Optoelectrónica shelves, Shelving location: RESERVA, Collection: Papel Close shelf browser
| 621.38152 B575 Properties of wide bandgap II-VI semiconductors / | 621.38152 H745 Handbook of compound semiconductors : | 621.38152 L665 Handbook series on semiconductor parameters / | 621.38152 P192 Gas source molecular beam epitaxy : | 621.38152 P362 Hydrogen in crystalline semiconductors / | 621.38152 S381 3ed. Semiconductor material and device characterization / | 621.38152 S617 Dispositivos semiconductores / |
1. Introduction 2. Chemistry 3. The generation of atomic and molecular beams for elemental and gas source molecular beam epitaxy 4. Molecular beam epitaxy systems and procedures 5. Doping during GDMBE 6. Characterization of heterostructures by high resolution X-ray diffraction 7. Optical properties of quantum wells 8. Carrier transport across quantum wells and superlattices 9. Bipolar transistors 10. Optoelectronic devices 11. In-Situ processing and selective área epitaxy
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