Plasma etching and reactive ion etching / J. W. Coburn
Material type: TextLanguage: English Publisher: New York : American Institute of Physics, 1982Description: 87 pSubject(s): Semiconductors | EtchingDDC classification: 621.381
Contents:
1. Introduction 2. Apparatus, terminology and parameters 3. The reactive gas glow discharge 4. Gas-Surface chemistry 5. Glow discharge process 6. The etching of aluminum 7. Plasma diagnostics and process control 8. Apparatus considetations.
Item type | Current location | Collection | Call number | Copy number | Status | Date due | Barcode |
---|---|---|---|---|---|---|---|
Libro OptoElectrónica | Laboratorio de Optoelectrónica GENERAL | Papel | 621.381 O658 (Browse shelf) | Ej. 1 | Available | L000536 |
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621.381 M655 Electrónica integrada : | 621.381 M663 Notas de electrónica : | 621.381 M875 Diseño con circuitos integrados TTL / | 621.381 O658 Plasma etching and reactive ion etching / | 621.381 P945 Diseño de circuitos con diodos y transistores / | 621.381 R173 Electrónica analógica / | 621.381 S358 Circuitos electrónicos digitales / |
1. Introduction 2. Apparatus, terminology and parameters 3. The reactive gas glow discharge 4. Gas-Surface chemistry 5. Glow discharge process 6. The etching of aluminum 7. Plasma diagnostics and process control 8. Apparatus considetations.
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